?2009 ixys all rights reserved 1 - 4 20090209d ixkp 13n60c5m ixys reserves the right to change limits, test conditions and dimensions. symbol conditions characteristic values (t vj = 25 c, unless otherwise speci ed) min. typ. max. r dson v gs = 10 v; i d = 6.6 a 270 300 m v gs(th) v ds = v gs ; i d = 0.44 ma 2.5 3 3.5 v i dss v ds = 600 v; v gs = 0 v t vj = 25? t vj = 125? 10 1 a ? i gss v gs = 20 v; v ds = 0 v 100 na c iss c oss v gs = 0 v; v ds = 100 v f = 1 mhz 1100 60 pf pf q g q gs q gd v gs = 0 to 10 v; v ds = 400 v; i d = 6.6 a 22 5 7.6 30 nc nc nc t d(on) t r t d(off) t f v gs = 10 v; v ds = 400 v i d = 6.6 a; r g = 4.3 10 5 40 5 ns ns ns ns r thjc 3.85 k/w i d25 = 6.5 a v dss = 600 v r ds(on) max = 0.3 coolmos ? 1) power mosfet features ?fast coolmos 1) power mosfet 4 th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (uis) - low thermal resistance due to reduced chip thickness ?enhanced total power density applications ?switched mode power supplies (smps) ?uninterruptible power supplies (ups) ?power factor correction (pfc) ?welding ?inductive heating ?pdp and lcd adapter mosfet symbol conditions maximum ratings v dss t vj = 25? 600 v v gs 20 v i d25 i d90 t c = 25? t c = 90? 6.5 4.5 a a e as e ar single pulse repetitive 290 0.44 mj mj dv/dt mosfet dv/dt ruggedness v ds = 0...480 v 5 0 v/ns d g s fully isolated package n-channel enhancement mode low r dson , high v dss mosfet ultra low gate charge to-220 fp g d s i d = 4.4 a; t c = 25? 1) coolmos is a trademark of in neon technologies ag. preliminary data
?2009 ixys all rights reserved 2 - 4 20090209d ixkp 13n60c5m ixys reserves the right to change limits, test conditions and dimensions. source-drain diode symbol conditions characteristic values (t vj = 25?, unless otherwise speci ed) min. typ. max. i s v gs = 0 v 6.6 a v sd i f = 6.6 a; v gs = 0 v 0.9 1.2 v t rr q rm i rm i f = 6.6 a; -di f /dt = 100 a/?; v r = 400 v 300 3.9 26 ns ? a component symbol conditions maximum ratings t vj t stg operating -55...+150 -55...+150 ? ? m d mounting torque 0.4 ... 0.6 nm symbol conditions characteristic values min. typ. max. r thch r thja with heatsink compound thermal resistane juntion - ambient 0.50 80 k/w k/w weight 2g
?2009 ixys all rights reserved 3 - 4 20090209d ixkp 13n60c5m ixys reserves the right to change limits, test conditions and dimensions. fig. 1 power dissipation fig. 2 typ. output characteristics fig. 3 typ. output characteristics 0 40 80 120 160 0 5 10 15 20 25 30 35 t c [ c] p tot [ w] ? p a a1 h a2 q l1 d e l b b1 c e to-220 abfp outline 4.5 v 5v 5.5 v 6v 8v 10 v 12v 20 v 0 5 10 15 20 25 05101520 v ds [v] i d ] a [ 4.5 v 5v 5.5 v 6v 8v 10v 12v 20 v 0 15 30 45 0 5 10 15 20 v ds [v] i d ] a [ t j = 25c v gs = v gs = t j = 150c
?2009 ixys all rights reserved 4 - 4 20090209d ixkp 13n60c5m ixys reserves the right to change limits, test conditions and dimensions. single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 10 0 10 -1 10 -2 t p [s] z c j h t ] w / k [ 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v ) s s d ( r b ] v [ 0 100 200 300 20 60 100 140 180 t j [c] e s a ] j m [ ciss coss crss 10 5 10 4 10 3 10 2 10 1 10 0 0 100 200 300 400 500 v ds [v] c] f p [ 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 q gate [nc] v s g ] v [ 25 c 150 c 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f ] a [ 25 c 150 c 0 10 20 30 40 50 0246810 v gs [v] i d ] a [ typ 98 % 0 0.2 0.4 0.6 0.8 1 -60 -20 20 60 100 140 180 t j [c] r ) n o ( s d [ ] 6.5 v 7v 10 v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 5 10 15 20 25 i d [a] r ) n o ( s d [ ] 5v 5.5 v 6v v ds = t jv = 150c i d = 6.6 a v gs = 10 v v ds > 2 r ds(on) max i d t j = t j = v ds = 120 v v gs = 0 v f = 1 mhz i d = 4.4 a i d = 0.25 ma d = t p /t i d = 6.6 a pulsed fig. 5 drain-source on-state resistance fig. 4 typ. drain-source on-state resistance characteristics of igbt fig. 7 forward characteristic of reverse diode fig. 8 typ. gate charge fig. 10 avalanche energy fig. 11 drain-source breakdown voltage fig. 6 typ. transfer characteristics fig. 9 typ. capacitances
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